Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices (Nato Science Series II:)

Defects in HIgh-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices (Nato Science Series II:) by

Quick Overview

Publisher: Springer

Binding: Hardcover
Edition: 2006
Language: English
Brand: imusti
EAN: 9781402043659
Feature: Springer
Format: Import
ISBN: 1402043651
Number Of Items: 1
Number Of Pages: 492
Publication Date: 2006-01-27
Manufacturer: Springer

Availability: Usually dispatched within 1-2 business days

Price Details
  • List Price: INR 20,045.50
  • Amazon Price:
  • INR 20,045.50

Product Features

Springer

The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.

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